Heavily doped n++ GaN Cap Layer AlN/GaN metal oxide semiconductor high electron mobility transistor

by K, Karami, S., Taking, A., Ofiare, A., Dhongde, A., Al-Khalidi, E., Wasige
Published 2022

Investigation of plasma induced etch damage/changes in AlGaN/GaN HEMTs

by A., Ofiare, S., Taking, K., Karami, A., Dhongde, A., Al-Khalidi, E., Wasige
Published 2022

The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs

by A., Dhongde, S., Taking, M., Elksne, S., Samanta, A., Ofiare, K., Karami, A., Al-Khalidi, E., Wasige
Published 2022