Electron velocity of 6 × 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors

by Arulkumaran, S., Ng, G. I., Manoj Kumar, C. M., Ranjan, K., Teo, K. L., Shoron, O. F., Rajan, S., Bin Dolmanan, S., Tripathy, S.
Published 2015