Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

by Ravikiran, L., Dharmarasu, N., Radhakrishnan, K., Agrawal, M., Yiding, Lin, Arulkumaran, S., Vicknesh, S., Ng, G. I.
Published 2015