Detecting MoS2 and MoSe2 with optical contrast simulation

بواسطة Zhang, X., Kawai, H., Yang, J., Goh, K.E.J.
منشور في 2021

Patterning of sub-1 nm dangling-bond lines with atomic precision alignment on H:Si(100) surface at room temperature

بواسطة Chen, S., Xu, H., Goh, K. E. J., Liu, Lerwen., Randall, J. N.
منشور في 2013

Subthreshold characteristics of ballistic electron emission spectra

بواسطة Qin, H. L., Goh, K. E. J., Bosman, Michel, Pey, Kin Leong, Troadec, C.
منشور في 2013

The electronic barrier height of silicon native oxides at different oxidation stages

بواسطة Qin, H. L., Goh, K. E. J., Troadec, C., Bosman, Michel, Pey, Kin Leong
منشور في 2013

Temperature-dependent relaxation current on single and dual layer Pt metal nanocrystal-based Al2O3/SiO2 gate stack

بواسطة Pey, Kin Leong, Mahapatra, S., Chen, Y. N., Goh, K. E. J., Wu, X., Lwin, Z. Z., Singh, P. K.
منشور في 2013

Electronic properties of atomically thin MoS2 layers grown by physical vapour deposition: Band structure and energy level alignment at layer/substrate interfaces

بواسطة Bussolotti, F, Chai, J, Yang, M, Kawai, H, Zhang, Z, Wang, S, Wong, S.L, Manzano, C, Huang, Y, Chi, D, Goh, K.E.J
منشور في 2020

Carrier control in 2D transition metal dichalcogenides with Al2O3 dielectric

بواسطة Lau, C.S., Chee, J.Y., Thian, D., Kawai, H., Deng, J., Wong, S.L., Ooi, Z.E., Lim, Y.-F., Goh, K.E.J.
منشور في 2021