Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

由 Kohen, D, Nguyen, X.S, Yadav, S, Kumar, A, Made, R.I, Heidelberger, C, Gong, X, Lee, K.H, Lee, K.E.K, Yeo, Y.C, Yoon, S.F, Fitzgerald, E.A
出版 2020