Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first process

by Kang, F.J., Yu, H.Y., Ren, C., Wang, X.P., Li, M.-F., Chan, D.S.H., Yeo, Y.-C., Sa, N., Yang, H., Liu, X.Y., Han, R.Q., Kwong, D.-L.
Published 2014