Intense terahertz emission from undoped GaAs/n-type GaAs and InAs/AlSb structures grown on Si substrates in the transmission-geometry excitation

بواسطة Estacio, E., Takatori, S., Pham, M. H., Yoshioka, T., Nakazato, T., Raduban, M. Cadatal, Shimizu, T., Sarukura, N., Hangyo, Masanori, Que, Christopher T., Tani, Masahiko, Edamura, Tadataka, Nakajima, Makoto, Misa, J. V., Jaculbia, R., Somintac, A., Salvador, A.
منشور في 2011