أرسل هذا في رسالة قصيرة: CONDUCTIVITY OF METAL OXIDE SEMICONDUCTOR (MOS) THIN FILMS DUE TO GAS ADSORPTION PROCESS BY USING POINT DEFECT - AND DIFFUSION THEORIES

  _____    _    _     ______    _____    _____    
 |__  //  | || | ||  /_   _//  |  ___|| |  __ \\  
   / //   | || | ||  `-| |,-   | ||__   | |  \ || 
  / //__  | \\_/ ||    | ||    | ||__   | |__/ || 
 /_____||  \____//     |_||    |_____|| |_____//  
 `-----`    `---`      `-`'    `-----`   -----`