發送短信 : CONDUCTIVITY OF METAL OXIDE SEMICONDUCTOR (MOS) THIN FILMS DUE TO GAS ADSORPTION PROCESS BY USING POINT DEFECT - AND DIFFUSION THEORIES

  _  _      ___      ______    ______   ______   
 | \| ||   / _ \\   /_____//  /_   _// |      \\ 
 |  ' ||  / //\ \\  `____ `    -| ||-  |  --  // 
 | .  || |  ___  || /___//     _| ||_  |  --  \\ 
 |_|\_|| |_||  |_|| `__ `     /_____// |______// 
 `-` -`  `-`   `-`  /_//      `-----`  `------`  
                    `-`