أرسل هذا في رسالة قصيرة: CONDUCTIVITY OF METAL OXIDE SEMICONDUCTOR (MOS) THIN FILMS DUE TO GAS ADSORPTION PROCESS BY USING POINT DEFECT - AND DIFFUSION THEORIES

 __   __   __   __   __   _    _    _      _____  
 \ \\/ //  \ \\/ // | || | || | || | ||   / ___// 
  \   //    \ ` //  | '--' || | || | ||   \___ \\ 
  / . \\     | ||   | .--. || | \\_/ ||   /    // 
 /_//\_\\    |_||   |_|| |_||  \____//   /____//  
 `-`  --`    `-`'   `-`  `-`    `---`   `-----`