CONDUCTIVITY OF METAL OXIDE SEMICONDUCTOR (MOS) THIN FILMS DUE TO GAS ADSORPTION PROCESS BY USING POINT DEFECT - AND DIFFUSION THEORIES
<p>In this work we study the effect of transport mechanism of charge carriers on the conductivity of metal oxide semiconductor (MaS) thin films due to gas adsorption within the framework of diffusion theory of point defect which uses the concept of small polarons and polarons as charge carrier...
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| Main Authors: | , |
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| 格式: | Article NonPeerReviewed |
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[Yogyakarta] : Fakultas MIPA Universitas Gadjah Mada
2007
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| 在線閱讀: | https://repository.ugm.ac.id/93848/ http://repository.ugm.ac.id/digitasi/index.php?module=cari_hasil_full&idbuku=1645 |
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| 機構: | Universitas Gadjah Mada |
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