Dopant concentrations analysis on electro-optic performances of gallium nitride-based ultraviolet light-emitting diode chip
A high dopant concentration significantly reduces the peak current of the internal quantum efficiency (IQE) of the light-emitting diode (LED). The effect of the dopant concentration on the epitaxial layer toward the IQE, current density, and IQE droop of gallium nitride (GaN)-based LED chip is analy...
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Main Authors: | , , , , , |
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Format: | Article |
Language: | English English |
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Society of Photo-Optical Instrumentation Engineers (SPIE)
2023
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Online Access: | http://irep.iium.edu.my/105823/7/105823_Dopant%20concentrations%20analysis%20on%20electro-optic%20performances.pdf http://irep.iium.edu.my/105823/8/105823_Dopant%20concentrations%20analysis%20on%20electro-optic%20performances_Scopus.pdf http://irep.iium.edu.my/105823/ https://www.spiedigitallibrary.org/journals/optical-engineering/volume-62/issue-7/077104/Dopant-concentrations-analysis-on-electro-optic-performances-of-gallium-nitride/10.1117/1.OE.62.7.077104.short?SSO=1 |
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Institution: | Universiti Islam Antarabangsa Malaysia |
Language: | English English |
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http://irep.iium.edu.my/105823/7/105823_Dopant%20concentrations%20analysis%20on%20electro-optic%20performances.pdfhttp://irep.iium.edu.my/105823/8/105823_Dopant%20concentrations%20analysis%20on%20electro-optic%20performances_Scopus.pdf
http://irep.iium.edu.my/105823/
https://www.spiedigitallibrary.org/journals/optical-engineering/volume-62/issue-7/077104/Dopant-concentrations-analysis-on-electro-optic-performances-of-gallium-nitride/10.1117/1.OE.62.7.077104.short?SSO=1