Transition metal oxide (TMO) thin film memristor on cu substrate using dilute electrodeposition method

Transition metal oxide (TMO) thin film memristor on cu substrate using dilute electrodeposition method

Instead of titanium dioxide (TiO2), many researches have been done to explore the compatibility of zinc oxide (ZnO) to be used as the active layer of memristor. In this study, an Au/ZnO-Cu2O-CuO/Cu memristor was fabricated using dilute electrodeposition and subsequently thermal oxidation. The XRD re...

Full description

Saved in:
Bibliographic Details
Main Authors: Fauzi, Fatin Bazilah, Othman, Raihan, Mohamed, Mohd Ambri, Herman, Sukreen Hana, Ahmad Azhar, Ahmad Zahirani, Ani, Mohd Hanafi
Format: Article
Language:English
Published: Japan Institute of Metals 2015
Subjects:
TA401 Materials of engineering and construction
Online Access:http://irep.iium.edu.my/44034/1/Transition_metal_oxide_thin_film_memristor_on_cu_substrate_using_dilute_electrodeposition_method.pdf
http://irep.iium.edu.my/44034/
https://www.jim.or.jp/journal/e/
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Universiti Islam Antarabangsa Malaysia
Language: English

Internet

http://irep.iium.edu.my/44034/1/Transition_metal_oxide_thin_film_memristor_on_cu_substrate_using_dilute_electrodeposition_method.pdf
http://irep.iium.edu.my/44034/
https://www.jim.or.jp/journal/e/

Similar Items