Transition metal oxide (TMO) thin film memristor on cu substrate using dilute electrodeposition method

• Main Authors: Fauzi, Fatin Bazilah, Othman, Raihan, Mohamed, Mohd Ambri, Herman, Sukreen Hana, Ahmad Azhar, Ahmad Zahirani, Ani, Mohd Hanafi
• Format: Article
• Language: English
• Published: Japan Institute of Metals 2015
• Subjects: TA401 Materials of engineering and construction
• Online Access: http://irep.iium.edu.my/44034/1/Transition_metal_oxide_thin_film_memristor_on_cu_substrate_using_dilute_electrodeposition_method.pdf; http://irep.iium.edu.my/44034/; https://www.jim.or.jp/journal/e/
• Institution: Universiti Islam Antarabangsa Malaysia

Instead of titanium dioxide (TiO2), many researches have been done to explore the compatibility of zinc oxide (ZnO) to be used as the active layer of memristor. In this study, an Au/ZnO-Cu2O-CuO/Cu memristor was fabricated using dilute electrodeposition and subsequently thermal oxidation. The XRD re...