Single event transient effects on 3T and 4T CMOS active pixel sensors for different technologies

• Main Authors: Ahamad Sukor, Masturah, Hedzir, Anati Syahira, Sabri, Sharizal Fadlie, Hasbullah, Nurul Fadzlin
• Format: Article
• Language: English; English
• Published: Taylor & Francis Group 2019
• Subjects: TK Electrical engineering. Electronics Nuclear engineering; TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
• Online Access: http://irep.iium.edu.my/72558/1/72558_Single%20event%20transient%20effects%20on%203T%20and%204T_complete.pdf; http://irep.iium.edu.my/72558/2/72558_Single%20event%20transient%20effects%20on%203T%20and%204T_scopus.pdf; http://irep.iium.edu.my/72558/; https://www.tandfonline.com/doi/abs/10.1080/1448837X.2019.1624245?journalCode=tele20
• Institution: Universiti Islam Antarabangsa Malaysia

The widely used CMOS Active Pixel Sensors (APS) in space imaging mission are vulnerable to radiations known as Single Event Transient (SET). This paper focus on 3T and 4T CMOS APS with technology from 130 nm scaling down to 32 nm, simulated using various Linear Energy Transfer (LET) magnitudes rangi...