Enhanced reliability of vertical strained impact ionization MOSFET incorporating dielectric pocket for ultra-sensitive biosensor applications

Enhanced reliability of vertical strained impact ionization MOSFET incorporating dielectric pocket for ultra-sensitive biosensor applications

Fast switching with an enhanced reliability device structure of Vertical Strained Impact Ionization MOSFET incorporating Dielectric Pocket (VESIMOS-DP) has been successfully design, simulated and analyzed in this paper. Ultra-low power with low subthreshold swing (S) and high breakdown voltage are i...

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Bibliographic Details
Main Authors: Ismail Saad, Mohd Zuhir Hamzah, Andee Hazwani Syazana Bacho, C., Bun Seng, A. M. Khairul, Bablu K. Ghosh, Nurmin Bolong
Format: Article
Language:English
Published: American Scientific Publishers 2017
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:https://eprints.ums.edu.my/id/eprint/19595/1/Enhanced%20reliability%20of%20vertical.pdf
https://eprints.ums.edu.my/id/eprint/19595/
https://doi.org/10.1166/asl.2017.10260
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Institution: Universiti Malaysia Sabah
Language: English

Internet

https://eprints.ums.edu.my/id/eprint/19595/1/Enhanced%20reliability%20of%20vertical.pdf
https://eprints.ums.edu.my/id/eprint/19595/
https://doi.org/10.1166/asl.2017.10260

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