Polysilicon Process Development – The Effect Of PECVD Process Parameters On The Film Characteristics

• 主要作者: Mujahidun Mashuri
• 其他作者: Ramzan Mat Ayub (Advisor)
• 格式: Learning Object
• 語言: English
• 出版: Universiti Malaysia Perlis 2008
• 主題: Silicon; Silica; Integrated circuits > Materials; Polycrystalline silicon film; Low Pressure Chemical Vapor Deposition; Polycrystalline silicon; Polysilicon
• 在線閱讀: http://dspace.unimap.edu.my/xmlui/handle/123456789/1350
• 機構: Universiti Malaysia Perlis

Thin polycrystalline silicon film has been used in the wide range of applications in the production of integrated circuits and other electronic products. Traditionally, polycrystalline silicon is deposited using Low Pressure Chemical Vapor Deposition (LPCVD) process at temperatures around 600 – 7...