Heavily doped n++ GaN Cap Layer AlN/GaN metal oxide semiconductor high electron mobility transistor

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Main Authors:	K, Karami, S., Taking, A., Ofiare, A., Dhongde, A., Al-Khalidi, E., Wasige
Other Authors:	k.karami.1@research.gla.ac.uk
Format:	Article
Language:	English
Published:	Universiti Malaysia Perlis (UniMAP) 2022
Subjects:	AlN/GaN Metal oxide semiconductor high electron mobility transistors (MOSHEMTs) Heavily doped GaN cap layer Selective etching the cap layer
Online Access:	http://dspace.unimap.edu.my:80/xmlui/handle/123456789/75036
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Institution:	Universiti Malaysia Perlis
Language:	English

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spelling	my.unimap-750362022-04-22T01:25:32Z Heavily doped n++ GaN Cap Layer AlN/GaN metal oxide semiconductor high electron mobility transistor K, Karami S., Taking A., Ofiare A., Dhongde A., Al-Khalidi E., Wasige k.karami.1@research.gla.ac.uk AlN/GaN Metal oxide semiconductor high electron mobility transistors (MOSHEMTs) Heavily doped GaN cap layer Selective etching the cap layer Link to publisher's homepage at http://ijneam.unimap.edu.my In this work, we report on the processing and device characteristics of n++ GaN/AlN/GaN metal oxide semiconductor high electron mobility transistors (MOSHEMTs). The AlN/GaN structure is capped with a highly doped n++ GaN layer which provides more free electrons in the cap layer thus helps in reducing the Ohmic contact resistance. However, this layer in the gate region needs to be removed prior to gate metal deposition to avoid a conducting path between gate metal and the cap layer. A conducting path between the gate metal and GaN cap layer creates gate to source and gate to drain short circuit. A selective etching recipe was developed between n++ GaN and AlN layers. The gas used is a mixture of SF6 and O2. A 5 nm SiO2 is used as a gate dielectric and surface passivation to the device. The fabricated device shows a maximum drain current density of 800 mA/mm and a maximum peak transconductance of 135 mS/mm. The breakdown voltage of the device is 73 V. The measured contact resistance for the non-annealed and annealed Ohmic contact is between 5 to 10 Ω.mm and 0.4 to 0.6 Ω.mm, respectively. This indicates that the usage of heavily doped 5 nm n++ GaN cap layer helps in reducing the contact resistance. The results show the potential of the AlN/GaN MOSHEMT structure with a n++ GaN cap layer for future high frequency power application. 2022-04-22T01:25:32Z 2022-04-22T01:25:32Z 2021-12 Article International Journal of Nanoelectronics and Materials, vol.14 (Special Issue), 2021, pages 45-51 1985-5761 (Printed) 1997-4434 (Online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/75036 http://ijneam.unimap.edu.my en Universiti Malaysia Perlis (UniMAP)
institution	Universiti Malaysia Perlis
building	UniMAP Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Malaysia Perlis
content_source	UniMAP Library Digital Repository
url_provider	http://dspace.unimap.edu.my/
language	English
topic	AlN/GaN Metal oxide semiconductor high electron mobility transistors (MOSHEMTs) Heavily doped GaN cap layer Selective etching the cap layer
spellingShingle	AlN/GaN Metal oxide semiconductor high electron mobility transistors (MOSHEMTs) Heavily doped GaN cap layer Selective etching the cap layer K, Karami S., Taking A., Ofiare A., Dhongde A., Al-Khalidi E., Wasige Heavily doped n++ GaN Cap Layer AlN/GaN metal oxide semiconductor high electron mobility transistor
description	Link to publisher's homepage at http://ijneam.unimap.edu.my
author2	k.karami.1@research.gla.ac.uk
author_facet	k.karami.1@research.gla.ac.uk K, Karami S., Taking A., Ofiare A., Dhongde A., Al-Khalidi E., Wasige
format	Article
author	K, Karami S., Taking A., Ofiare A., Dhongde A., Al-Khalidi E., Wasige
author_sort	K, Karami
title	Heavily doped n++ GaN Cap Layer AlN/GaN metal oxide semiconductor high electron mobility transistor
title_short	Heavily doped n++ GaN Cap Layer AlN/GaN metal oxide semiconductor high electron mobility transistor
title_full	Heavily doped n++ GaN Cap Layer AlN/GaN metal oxide semiconductor high electron mobility transistor
title_fullStr	Heavily doped n++ GaN Cap Layer AlN/GaN metal oxide semiconductor high electron mobility transistor
title_full_unstemmed	Heavily doped n++ GaN Cap Layer AlN/GaN metal oxide semiconductor high electron mobility transistor
title_sort	heavily doped n++ gan cap layer aln/gan metal oxide semiconductor high electron mobility transistor
publisher	Universiti Malaysia Perlis (UniMAP)
publishDate	2022
url	http://dspace.unimap.edu.my:80/xmlui/handle/123456789/75036
_version_	1738511703425941504

Heavily doped n++ GaN Cap Layer AlN/GaN metal oxide semiconductor high electron mobility transistor

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