Heavily doped n++ GaN Cap Layer AlN/GaN metal oxide semiconductor high electron mobility transistor

• Main Authors: K, Karami, S., Taking, A., Ofiare, A., Dhongde, A., Al-Khalidi, E., Wasige
• Other Authors: [e-mail]
• Format: Article
• Language: English
• Published: Universiti Malaysia Perlis (UniMAP) 2022
• Subjects: AlN/GaN; Metal oxide semiconductor high electron mobility transistors (MOSHEMTs); Heavily doped GaN cap layer; Selective etching the cap layer
• Online Access: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/75036
• Institution: Universiti Malaysia Perlis

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