The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs

The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs

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Bibliographic Details
Main Authors: A., Dhongde, S., Taking, M., Elksne, S., Samanta, A., Ofiare, K., Karami, A., Al-Khalidi, E., Wasige
Other Authors: a.dhongde.1@research.gla.ac.uk
Format: Article
Language:English
Published: Universiti Malaysia Perlis (UniMAP) 2022
Subjects:
AlGaN/GaN
Etching high electron mobility transistors (HEMTs)
Ohmic contact
Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/75226
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Institution: Universiti Malaysia Perlis
Language: English
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Summary:Link to publisher's homepage at http://ijneam.unimap.edu.my

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