Annealing effects on Polycrystalline Silicon Germanium (SiGe) thin films grown on nanostructured silicon substrates using thermal evaporation technique
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my.unimap-771472022-11-23T03:44:53Z Annealing effects on Polycrystalline Silicon Germanium (SiGe) thin films grown on nanostructured silicon substrates using thermal evaporation technique Azhari, A. W. Azhari, A. W. Eop, T. S. Che Halin, D. S. Sopian, K. Hashim, U. Zaidi, S. H. ayuwazira@unimap.edu.my Faculty of Civil Engineering Technology, Universiti Malaysia Perlis (UniMAP) Centre of Excellence, Water Research and Environmental Sustainability Growth, (WAREG), Universiti Malaysia Perlis (UniMAP) Center of Excellence, Geopolymer and Green Technology (CEGeoGTech), Universiti Malaysia Perlis (UniMAP) Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia (UKM) Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP) Gratings Incorporated Albuquerque, USA Polycrystalline Silicon germanium Thin film Silicon nanostructures Photovoltaic Link to publisher's homepage at http://ijneam.unimap.edu.my/ Polycrystalline SiGe thin films have been formed after thermal annealing of formerly vacuum evaporated a-Ge layers. The a-Ge thin films were deposited onto nanostructured Si substrates via low-cost thermal evaporation method. Then, the films were annealed in a furnace at temperatures ranging from 400 °C to 1000 °C resultin – 800 °C. The crystalline structure of the SiGe layer is improved as a function of increased temperature. This is shown by the low FWHM of about 5.27 as compared to the commercially available Ge substrates where the FWHM value is about 5.06. This method also produces more relax Ge layer where the strain value is 0.261. 2022 2022-11-23T03:44:53Z 2022-11-23T03:44:53Z 2022-10 Article International Journal of Nanoelectronics and Materials, vol.15 (4), 2022, pages 303-318 1985-5761 (Printed) 1997-4434 (Online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/77147 http://ijneam.unimap.edu.my en Universiti Malaysia Perlis (UniMAP) |
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Polycrystalline Silicon germanium Thin film Silicon nanostructures Photovoltaic |
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Polycrystalline Silicon germanium Thin film Silicon nanostructures Photovoltaic Azhari, A. W. Azhari, A. W. Eop, T. S. Che Halin, D. S. Sopian, K. Hashim, U. Zaidi, S. H. Annealing effects on Polycrystalline Silicon Germanium (SiGe) thin films grown on nanostructured silicon substrates using thermal evaporation technique |
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Link to publisher's homepage at http://ijneam.unimap.edu.my/ |
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ayuwazira@unimap.edu.my |
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ayuwazira@unimap.edu.my Azhari, A. W. Azhari, A. W. Eop, T. S. Che Halin, D. S. Sopian, K. Hashim, U. Zaidi, S. H. |
| format |
Article |
| author |
Azhari, A. W. Azhari, A. W. Eop, T. S. Che Halin, D. S. Sopian, K. Hashim, U. Zaidi, S. H. |
| author_sort |
Azhari, A. W. |
| title |
Annealing effects on Polycrystalline Silicon Germanium (SiGe) thin films grown on nanostructured silicon substrates using thermal evaporation technique |
| title_short |
Annealing effects on Polycrystalline Silicon Germanium (SiGe) thin films grown on nanostructured silicon substrates using thermal evaporation technique |
| title_full |
Annealing effects on Polycrystalline Silicon Germanium (SiGe) thin films grown on nanostructured silicon substrates using thermal evaporation technique |
| title_fullStr |
Annealing effects on Polycrystalline Silicon Germanium (SiGe) thin films grown on nanostructured silicon substrates using thermal evaporation technique |
| title_full_unstemmed |
Annealing effects on Polycrystalline Silicon Germanium (SiGe) thin films grown on nanostructured silicon substrates using thermal evaporation technique |
| title_sort |
annealing effects on polycrystalline silicon germanium (sige) thin films grown on nanostructured silicon substrates using thermal evaporation technique |
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Universiti Malaysia Perlis (UniMAP) |
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2022 |
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http://dspace.unimap.edu.my:80/xmlui/handle/123456789/77147 |
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1753972988462497792 |