Modeling, simulation and optimization of 14nm high-K/metal gate NMOS with taguchi method
Analysis of variance (ANOVA); Electron beam lithography; Metals; MOS devices; Oxide semiconductors; Taguchi methods; ATHENA; ATLAS; Electrical characteristic; Electronics technology; International Technology Roadmap for Semiconductors; MOS-FET; Simulation and optimization; Taguchi optimization metho...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Other Authors: | |
| Format: | Conference Paper |
| Published: |
Institute of Electrical and Electronics Engineers Inc.
2023
|
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Universiti Tenaga Nasional |