High mobility and transparent ZTO ETM prepared by RF reactive co-sputtering for perovskite solar cell application
Thin-films of Zinc Tin Oxide (ZTO) with high charge carrier mobility and superior optical transmittance has been prepared by the rf-reactive co-sputtering technique in argon-oxygen (99:01) ambient. These deposited films have been systematically studied to determine the effect of deposition temperatu...
Saved in:
Main Authors: | , , , , , , |
---|---|
Other Authors: | |
Format: | Article |
Published: |
Elsevier B.V.
2023
|
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Universiti Tenaga Nasional |
id |
my.uniten.dspace-24485 |
---|---|
record_format |
dspace |
spelling |
my.uniten.dspace-244852023-05-29T15:23:55Z High mobility and transparent ZTO ETM prepared by RF reactive co-sputtering for perovskite solar cell application Islam M.A. Rahman K.S. Misran H. Asim N. Hossain M.S. Akhtaruzzaman M. Amin N. 57220973693 56348138800 6506899840 55902096700 57212814508 57195441001 7102424614 Thin-films of Zinc Tin Oxide (ZTO) with high charge carrier mobility and superior optical transmittance has been prepared by the rf-reactive co-sputtering technique in argon-oxygen (99:01) ambient. These deposited films have been systematically studied to determine the effect of deposition temperature on film structure, composition, and optoelectronic properties. X-ray diffraction (XRD) spectra indicated that the ZTO films remain amorphous even growth temperature increased to 400 �C. The films deposited at room temperature (RT) and 100 �C were slightly tin-rich found in Energy-dispersive X-ray (EDX) spectroscopy compared to the films deposited over 100 �C. It was found that growth temperature played a crucial role in carrier concentration and mobility of the films and such properties are controlled by the grain boundary scattering over the Sn dopant concentration. The transmittance of the films was found above 85% in the visible range regardless of substrate temperature. The complete perovskite solar cell has been numerically analyzed by employing SCAPS-1D software and the effect of ZTO's optoelectrical properties on cell performance has been revealed. � 2019 Final 2023-05-29T07:23:55Z 2023-05-29T07:23:55Z 2019 Article 10.1016/j.rinp.2019.102518 2-s2.0-85069840324 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85069840324&doi=10.1016%2fj.rinp.2019.102518&partnerID=40&md5=f6dd4c8d99462e8d024b99e2194748b8 https://irepository.uniten.edu.my/handle/123456789/24485 14 102518 All Open Access, Gold Elsevier B.V. Scopus |
institution |
Universiti Tenaga Nasional |
building |
UNITEN Library |
collection |
Institutional Repository |
continent |
Asia |
country |
Malaysia |
content_provider |
Universiti Tenaga Nasional |
content_source |
UNITEN Institutional Repository |
url_provider |
http://dspace.uniten.edu.my/ |
description |
Thin-films of Zinc Tin Oxide (ZTO) with high charge carrier mobility and superior optical transmittance has been prepared by the rf-reactive co-sputtering technique in argon-oxygen (99:01) ambient. These deposited films have been systematically studied to determine the effect of deposition temperature on film structure, composition, and optoelectronic properties. X-ray diffraction (XRD) spectra indicated that the ZTO films remain amorphous even growth temperature increased to 400 �C. The films deposited at room temperature (RT) and 100 �C were slightly tin-rich found in Energy-dispersive X-ray (EDX) spectroscopy compared to the films deposited over 100 �C. It was found that growth temperature played a crucial role in carrier concentration and mobility of the films and such properties are controlled by the grain boundary scattering over the Sn dopant concentration. The transmittance of the films was found above 85% in the visible range regardless of substrate temperature. The complete perovskite solar cell has been numerically analyzed by employing SCAPS-1D software and the effect of ZTO's optoelectrical properties on cell performance has been revealed. � 2019 |
author2 |
57220973693 |
author_facet |
57220973693 Islam M.A. Rahman K.S. Misran H. Asim N. Hossain M.S. Akhtaruzzaman M. Amin N. |
format |
Article |
author |
Islam M.A. Rahman K.S. Misran H. Asim N. Hossain M.S. Akhtaruzzaman M. Amin N. |
spellingShingle |
Islam M.A. Rahman K.S. Misran H. Asim N. Hossain M.S. Akhtaruzzaman M. Amin N. High mobility and transparent ZTO ETM prepared by RF reactive co-sputtering for perovskite solar cell application |
author_sort |
Islam M.A. |
title |
High mobility and transparent ZTO ETM prepared by RF reactive co-sputtering for perovskite solar cell application |
title_short |
High mobility and transparent ZTO ETM prepared by RF reactive co-sputtering for perovskite solar cell application |
title_full |
High mobility and transparent ZTO ETM prepared by RF reactive co-sputtering for perovskite solar cell application |
title_fullStr |
High mobility and transparent ZTO ETM prepared by RF reactive co-sputtering for perovskite solar cell application |
title_full_unstemmed |
High mobility and transparent ZTO ETM prepared by RF reactive co-sputtering for perovskite solar cell application |
title_sort |
high mobility and transparent zto etm prepared by rf reactive co-sputtering for perovskite solar cell application |
publisher |
Elsevier B.V. |
publishDate |
2023 |
_version_ |
1806424393580019712 |