Robust optimization of a silicon lateral pin photodiode
The objective of this paper is to optimize the process parameters for a Si lateral p-in photodiode to obtain high responsivity, frequency response, quantum efficiency and low transient time Four process parameters were chosen, namely the intrinsic region length, photo-absorption layer thickness, the...
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| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Published: |
2023
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| Subjects: | |
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| Institution: | Universiti Tenaga Nasional |