Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistor

• Main Authors: Afifah Maheran, A.H., Menon, P.S., Ahmad, I., Shaari, S.
• Published: 2017
• Online Access: http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5206
• Institution: Universiti Tenaga Nasional

This paper reports on the effects of the Halo structure variations on threshold voltage (Vth) in a 22 nm gate length high-k/metal gate planar NMOS transistor. Since the Vth is one of the important physical parameter for determining the functionality of complementary metal-oxide-semiconductor device,...