Improved dielectric performance of barium strontium titanate multilayered capacitor by means of pulsed laser deposition and slow injection sol-gel methods
A Pt/BST/NiFe/Cu multilayered capacitor was fabricated incorporating a polycrystalline Ba0.5Sr0.5TiO3 (BST) film deposited using the pulsed laser deposition technique. Qualitative X-ray diffraction analysis confirmed a perovskite structure for the deposited BST dielectric films which were fired at v...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Carl Hanser Verlag
2014
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| Online Access: | http://psasir.upm.edu.my/id/eprint/37974/1/Improved%20dielectric%20performance%20of%20barium%20strontium%20titanate%20multilayered%20capacitor%20by%20means%20of%20pulsed%20laser%20deposition%20and%20slow%20injection%20sol-gel%20methods.pdf http://psasir.upm.edu.my/id/eprint/37974/ http://www.hanser-elibrary.com/doi/abs/10.3139/146.111045 |
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| Institution: | Universiti Putra Malaysia |
| Language: | English |
| Summary: | A Pt/BST/NiFe/Cu multilayered capacitor was fabricated incorporating a polycrystalline Ba0.5Sr0.5TiO3 (BST) film deposited using the pulsed laser deposition technique. Qualitative X-ray diffraction analysis confirmed a perovskite structure for the deposited BST dielectric films which were fired at various temperatures. No intermediate phase was discernable with a post-annealing temperature of 750°C and highly crystallized thin film was obtained at a post-annealing temperature of 800°C. The fabricated capacitor with a BST film thickness of 665 nm exhibited respectable electrical performance with a dielectric constant, k of 657 and a dielectric loss, tan δ = 0.0137 at room temperature at an applied frequency of 1 MHz. The recorded charge storage density and leakage current density were 4.6 μC cm-2 and 33 nA cm-2, respectively, with ±5 V bias. |
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