Detecting Resistive-Opens in RRAM using Programmable DfT Scheme

• Main Authors: Nor Zaidi , Haron, Norsuhaidah , Arshad, Sukreen Hana , Herman
• Format: Conference or Workshop Item
• Language: English
• Published: 2013
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utem.edu.my/id/eprint/10106/1/ASQED13.pdf; http://eprints.utem.edu.my/id/eprint/10106/
• Institution: Universiti Teknikal Malaysia Melaka

Resistive Random Access Memory (RRAM) is one of the emerging memory devices that possesses a combined attribute of SRAM, DRAM and flash. How- ever, as the technology and fabrication process of such a promising memory devices are still immature, RRAM is expected to be impacted by process-variation faults such as resistive-open. This kind of defect is difficult to be detected using existing Design-for-Testability (DfT) scheme, which is developed based on a single critical defect value. This paper presents a new DfT scheme with the capability to identify faulty RRAM cells impacted by resistive-opens due to process variation. The new DfT scheme, referred to as Programmable Low Write Voltage (PLWV), is based on multiple voltage levels that can be programmed to suit the target fault coverage. The concept, design methodology and circuit are described. SPICE simulation results suggest that the proposed PLWV scheme can detect faults with different defect values at minimal circuit modification.