Investigation Of Cu Interconnect Bulk Resistivity Deterioration As A Function Of Annealing Time

Copper layer metallization is one of the important processes in integrated circuit manufacturing. One of the issues faced in this process is the proneness of Cu interface diffusion as well as surface oxidation which degrade some of the Cu thin film properties. Due to this concern, most integrated ci...

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Bibliographic Details
Main Authors: Abd Rahman, Md Nizam, Muhamad, Razali, Ahmad, Anuar Fadli, Raj, Adrian
Format: Technical Report
Language:English
Published: UTeM 2020
Online Access:http://eprints.utem.edu.my/id/eprint/25483/1/Investigation%20Of%20Cu%20Interconnet%20Bulk%20Resistivity%20Deterioration%20As%20A%20Function%20Of%20Annealing%20Time.pdf
http://eprints.utem.edu.my/id/eprint/25483/
https://plh.utem.edu.my/cgi-bin/koha/opac-detail.pl?biblionumber=118463
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Institution: Universiti Teknikal Malaysia Melaka
Language: English
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