Morphology and structure of self-assembled inxGa1-xAs quantum dots grown on gaAs (100) using MOCVD

Morphology and structure of self-assembled inxGa1-xAs quantum dots grown on gaAs (100) using MOCVD

Stacked InxGa1-xAs quantum dots (QDs) were grown by metal-organic chemical vapor deposition (MOCVD) via Stranski -Krastanov growth mode. AFM images show that the QDs structures were formed and the stacked structure of InxGa1-xAs QDs were confirmed by the HR-XRD analysis. Composition of the dots on t...

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Main Authors: Zulkafli, Othaman, Didik, Aryanto, Abd. Khamim, Ismail
Format: Book Section
Published: American Institute of Physics 2009
Subjects:
QC Physics
Online Access:http://eprints.utm.my/id/eprint/12992/
http://dx.doi.org/10.1063/1.3160166
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Institution: Universiti Teknologi Malaysia
id my.utm.12992
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spelling my.utm.129922011-07-12T01:25:02Z http://eprints.utm.my/id/eprint/12992/ Morphology and structure of self-assembled inxGa1-xAs quantum dots grown on gaAs (100) using MOCVD Zulkafli, Othaman Didik, Aryanto Abd. Khamim, Ismail QC Physics Stacked InxGa1-xAs quantum dots (QDs) were grown by metal-organic chemical vapor deposition (MOCVD) via Stranski -Krastanov growth mode. AFM images show that the QDs structures were formed and the stacked structure of InxGa1-xAs QDs were confirmed by the HR-XRD analysis. Composition of the dots on the top most layers was related to the number of stack layers. The observed PL peak position was blue-shifted due to different number of stacked QDs. The PL intensity also dramatically increase, which shows the possibility of the QDs application in optical devices at room temperature American Institute of Physics 2009 Book Section PeerReviewed Zulkafli, Othaman and Didik, Aryanto and Abd. Khamim, Ismail (2009) Morphology and structure of self-assembled inxGa1-xAs quantum dots grown on gaAs (100) using MOCVD. In: Nanoscience And Nanotechnology: International Conference on Nanoscience and Nanotechnology—2008. American Institute of Physics, USA, pp. 36-40. ISBN 978-0-7354-0673-5 http://dx.doi.org/10.1063/1.3160166 doi:10.1063/1.3160166
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic QC Physics
spellingShingle QC Physics
Zulkafli, Othaman
Didik, Aryanto
Abd. Khamim, Ismail
Morphology and structure of self-assembled inxGa1-xAs quantum dots grown on gaAs (100) using MOCVD
description Stacked InxGa1-xAs quantum dots (QDs) were grown by metal-organic chemical vapor deposition (MOCVD) via Stranski -Krastanov growth mode. AFM images show that the QDs structures were formed and the stacked structure of InxGa1-xAs QDs were confirmed by the HR-XRD analysis. Composition of the dots on the top most layers was related to the number of stack layers. The observed PL peak position was blue-shifted due to different number of stacked QDs. The PL intensity also dramatically increase, which shows the possibility of the QDs application in optical devices at room temperature
format Book Section
author Zulkafli, Othaman
Didik, Aryanto
Abd. Khamim, Ismail
author_facet Zulkafli, Othaman
Didik, Aryanto
Abd. Khamim, Ismail
author_sort Zulkafli, Othaman
title Morphology and structure of self-assembled inxGa1-xAs quantum dots grown on gaAs (100) using MOCVD
title_short Morphology and structure of self-assembled inxGa1-xAs quantum dots grown on gaAs (100) using MOCVD
title_full Morphology and structure of self-assembled inxGa1-xAs quantum dots grown on gaAs (100) using MOCVD
title_fullStr Morphology and structure of self-assembled inxGa1-xAs quantum dots grown on gaAs (100) using MOCVD
title_full_unstemmed Morphology and structure of self-assembled inxGa1-xAs quantum dots grown on gaAs (100) using MOCVD
title_sort morphology and structure of self-assembled inxga1-xas quantum dots grown on gaas (100) using mocvd
publisher American Institute of Physics
publishDate 2009
url http://eprints.utm.my/id/eprint/12992/
http://dx.doi.org/10.1063/1.3160166
_version_ 1643646088137146368

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