Carbonization layer grown by acetylene reaction on SI(100) and (111) surface using low pressure chemical vapor deposition

Carbonization layer grown by acetylene reaction on SI(100) and (111) surface using low pressure chemical vapor deposition

Surface carbonization on Si(100) and Si(111) using acetylene as single carbon source was performed in a low-pressure chemical vapor deposition chamber using rapid thermal technique. The dependences of crystallinity, crystal orientation and bonding state of carbonization layer on acetylene flow rates...

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Main Authors: Hashim, Abdul manaf, Kanji, Yasui
Format: Article
Language:English
English
Published: Penerbit UTM Press 2009
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/13349/1/AbdulManafHashim2009_CarbonizationLayerGrownbyAcetyleneReaction.pdf
http://eprints.utm.my/id/eprint/13349/2/164
http://eprints.utm.my/id/eprint/13349/
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Institution: Universiti Teknologi Malaysia
Language: English
English
id my.utm.13349
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spelling my.utm.133492017-11-01T04:17:20Z http://eprints.utm.my/id/eprint/13349/ Carbonization layer grown by acetylene reaction on SI(100) and (111) surface using low pressure chemical vapor deposition Hashim, Abdul manaf Kanji, Yasui TK Electrical engineering. Electronics Nuclear engineering Surface carbonization on Si(100) and Si(111) using acetylene as single carbon source was performed in a low-pressure chemical vapor deposition chamber using rapid thermal technique. The dependences of crystallinity, crystal orientation and bonding state of carbonization layer on acetylene flow rates, pressures, temperatures and times were evaluated using X-ray diffractometry and electron probe microanalysis analytical techniques. The stoichiometric carbonization layer with good crystallinity, crystal orientation and bonding state was successfully formed at 1100 °C with C2H2 flow rate of 2 sccm and reaction pressure of 0.3 Torr. Penerbit UTM Press 2009-06 Article PeerReviewed application/pdf en http://eprints.utm.my/id/eprint/13349/1/AbdulManafHashim2009_CarbonizationLayerGrownbyAcetyleneReaction.pdf text/html en http://eprints.utm.my/id/eprint/13349/2/164 Hashim, Abdul manaf and Kanji, Yasui (2009) Carbonization layer grown by acetylene reaction on SI(100) and (111) surface using low pressure chemical vapor deposition. Jurnal Teknologi, 50 (D). pp. 23-32. ISSN 2180-3722 http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:67934 DOI:10.11113/jt.v50.164
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
language English
English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Hashim, Abdul manaf
Kanji, Yasui
Carbonization layer grown by acetylene reaction on SI(100) and (111) surface using low pressure chemical vapor deposition
description Surface carbonization on Si(100) and Si(111) using acetylene as single carbon source was performed in a low-pressure chemical vapor deposition chamber using rapid thermal technique. The dependences of crystallinity, crystal orientation and bonding state of carbonization layer on acetylene flow rates, pressures, temperatures and times were evaluated using X-ray diffractometry and electron probe microanalysis analytical techniques. The stoichiometric carbonization layer with good crystallinity, crystal orientation and bonding state was successfully formed at 1100 °C with C2H2 flow rate of 2 sccm and reaction pressure of 0.3 Torr.
format Article
author Hashim, Abdul manaf
Kanji, Yasui
author_facet Hashim, Abdul manaf
Kanji, Yasui
author_sort Hashim, Abdul manaf
title Carbonization layer grown by acetylene reaction on SI(100) and (111) surface using low pressure chemical vapor deposition
title_short Carbonization layer grown by acetylene reaction on SI(100) and (111) surface using low pressure chemical vapor deposition
title_full Carbonization layer grown by acetylene reaction on SI(100) and (111) surface using low pressure chemical vapor deposition
title_fullStr Carbonization layer grown by acetylene reaction on SI(100) and (111) surface using low pressure chemical vapor deposition
title_full_unstemmed Carbonization layer grown by acetylene reaction on SI(100) and (111) surface using low pressure chemical vapor deposition
title_sort carbonization layer grown by acetylene reaction on si(100) and (111) surface using low pressure chemical vapor deposition
publisher Penerbit UTM Press
publishDate 2009
url http://eprints.utm.my/id/eprint/13349/1/AbdulManafHashim2009_CarbonizationLayerGrownbyAcetyleneReaction.pdf
http://eprints.utm.my/id/eprint/13349/2/164
http://eprints.utm.my/id/eprint/13349/
http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:67934
_version_ 1643646166871572480

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