Enhanced performance of nanoscale vertical MOSFET by oblique rotating implantation (ORI) and fillet local oxidation (FILOX + ORI) technology

• Main Authors: Saad, Ismail, M. A. Lee, Razak, A. R., Munawar, F. M. N., Zul Atfyi, Ismail, Razali
• Format: Conference or Workshop Item
• Published: 2009
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/15151/; http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:100867
• Institution: Universiti Teknologi Malaysia

Enhanced symmetrical self-aligned double-gate (DG) vertical MOSFET with low parasitic capacitance is presented. The process utilizes the oblique rotating ion implantation (ORI) method combined with fillet local oxidation (FILOX) technology (FILOX i- ORI). Self-aligned region forms a sharp vertical c...