Enhanced performance of nanoscale vertical MOSFET by oblique rotating implantation (ORI) and fillet local oxidation (FILOX + ORI) technology

• Main Authors: Saad, Ismail, M. A. Lee, Razak, A. R., Munawar, F. M. N., Zul Atfyi, Ismail, Razali
• Format: Conference or Workshop Item
• Published: 2009
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/15151/; http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:100867
• Institution: Universiti Teknologi Malaysia

Enhanced symmetrical self-aligned double-gate (DG) vertical MOSFET with low parasitic capacitance is presented. The process utilizes the oblique rotating ion implantation (ORI) method combined with fillet local oxidation (FILOX) technology (FILOX i- ORI). Self-aligned region forms a sharp vertical channel profile with an increased number of electrons in the channel. The analysis was made with scaling the channel length down to 50nm and comparing with standard devices. Tremendous improved of drive-on current, reduced ofT-state leakage current and minimized effects of drain-induced-barrier-lowering (DIBL) have been revealed. The gate-to-drain capacitance has been signific.