Carbonization layer obtained by acetylene reaction with Si (100) and (111) surface using low pressure chemical vapor deposition

Surface carbonization on Si (100) and Si (111) using acetylene as single carbon source was performed in a low-pressure chemical vapor deposition chamber using rapid thermal technique. The dependence of crystallinity, crystal orientation and bonding state of carbonization layer on acetylene flow rate...

Full description

Saved in:

Bibliographic Details
Main Author:	Hashim, Abdul Manaf
Format:	Article
Published:	Asian Network for Scientific Information 2008
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/id/eprint/25919/ http://scialert.net/qredirect.php?doi=jas.2008.3473.3478&linkid=pdf
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	Universiti Teknologi Malaysia

id	my.utm.25919
record_format	eprints
spelling	my.utm.259192018-03-22T10:51:04Z http://eprints.utm.my/id/eprint/25919/ Carbonization layer obtained by acetylene reaction with Si (100) and (111) surface using low pressure chemical vapor deposition Hashim, Abdul Manaf TK Electrical engineering. Electronics Nuclear engineering Surface carbonization on Si (100) and Si (111) using acetylene as single carbon source was performed in a low-pressure chemical vapor deposition chamber using rapid thermal technique. The dependence of crystallinity, crystal orientation and bonding state of carbonization layer on acetylene flow rates, pressures, temperatures and times were evaluated using X-ray diffractometry and electron probe microanalysis analytical techniques. The stoichiometric carbonization layer with good crystallinity, crystal orientation and bonding state was successfully formed at 1100°C with C2H2 flow rate of 2 sccm and reaction pressure of 0.3 Torr. Asian Network for Scientific Information 2008 Article PeerReviewed Hashim, Abdul Manaf (2008) Carbonization layer obtained by acetylene reaction with Si (100) and (111) surface using low pressure chemical vapor deposition. Journal of Applied Sciences, 8 (19). pp. 3473-3478. ISSN 1812-5654 http://scialert.net/qredirect.php?doi=jas.2008.3473.3478&linkid=pdf doi:10.3923/jas.2008.3473.3478
institution	Universiti Teknologi Malaysia
building	UTM Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Teknologi Malaysia
content_source	UTM Institutional Repository
url_provider	http://eprints.utm.my/
topic	TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	TK Electrical engineering. Electronics Nuclear engineering Hashim, Abdul Manaf Carbonization layer obtained by acetylene reaction with Si (100) and (111) surface using low pressure chemical vapor deposition
description	Surface carbonization on Si (100) and Si (111) using acetylene as single carbon source was performed in a low-pressure chemical vapor deposition chamber using rapid thermal technique. The dependence of crystallinity, crystal orientation and bonding state of carbonization layer on acetylene flow rates, pressures, temperatures and times were evaluated using X-ray diffractometry and electron probe microanalysis analytical techniques. The stoichiometric carbonization layer with good crystallinity, crystal orientation and bonding state was successfully formed at 1100°C with C2H2 flow rate of 2 sccm and reaction pressure of 0.3 Torr.
format	Article
author	Hashim, Abdul Manaf
author_facet	Hashim, Abdul Manaf
author_sort	Hashim, Abdul Manaf
title	Carbonization layer obtained by acetylene reaction with Si (100) and (111) surface using low pressure chemical vapor deposition
title_short	Carbonization layer obtained by acetylene reaction with Si (100) and (111) surface using low pressure chemical vapor deposition
title_full	Carbonization layer obtained by acetylene reaction with Si (100) and (111) surface using low pressure chemical vapor deposition
title_fullStr	Carbonization layer obtained by acetylene reaction with Si (100) and (111) surface using low pressure chemical vapor deposition
title_full_unstemmed	Carbonization layer obtained by acetylene reaction with Si (100) and (111) surface using low pressure chemical vapor deposition
title_sort	carbonization layer obtained by acetylene reaction with si (100) and (111) surface using low pressure chemical vapor deposition
publisher	Asian Network for Scientific Information
publishDate	2008
url	http://eprints.utm.my/id/eprint/25919/ http://scialert.net/qredirect.php?doi=jas.2008.3473.3478&linkid=pdf
_version_	1643647627044061184

Carbonization layer obtained by acetylene reaction with Si (100) and (111) surface using low pressure chemical vapor deposition

Similar Items