Heteroepitaxial Growth Of 3C–SiC On Si Substrates By Rapid Thermal Triode Plasma CVD Using Dimethyl silane At Low Temperature

Heteroepitaxial Growth Of 3C–SiC On Si Substrates By Rapid Thermal Triode Plasma CVD Using Dimethyl silane At Low Temperature

The investigation of the dependence of the cubic silicon carbide (3C-SiC) film characteristics on the reaction pressures, growth temperatures and hydrogen dilution rates was carried out by rapid thermal triode plasma CVD using dimethylsilane as a source gas. The stoichiometric 3C-SiC films with good...

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Main Authors: Hashim, Abdul Manaf, Yasui, Kanji
Format: Article
Published: IEEE International Conference on Semiconductor Electronics 2008
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/25949/
http://dx.doi.org/10.1109/SMELEC.2006.380713
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Institution: Universiti Teknologi Malaysia
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spelling my.utm.259492018-11-30T06:22:52Z http://eprints.utm.my/id/eprint/25949/ Heteroepitaxial Growth Of 3C–SiC On Si Substrates By Rapid Thermal Triode Plasma CVD Using Dimethyl silane At Low Temperature Hashim, Abdul Manaf Yasui, Kanji TK Electrical engineering. Electronics Nuclear engineering The investigation of the dependence of the cubic silicon carbide (3C-SiC) film characteristics on the reaction pressures, growth temperatures and hydrogen dilution rates was carried out by rapid thermal triode plasma CVD using dimethylsilane as a source gas. The stoichiometric 3C-SiC films with good crystallinity and crystal orientation were successfully grown at 1100-1200degC. The crystallinity and the crystal orientation of SiC films grown at large dilution rate of above 200 and growth pressure of 0.3 ~ 0.7 Torr were better than those grown at small dilution rate and high growth pressure. Under large dilution rate, large amount of hydrogen radicals can be generated. It is speculated that excessive carbon atoms or weak bonds formed in SiC films were effectively extracted by the large amount of hydrogen radicals. IEEE International Conference on Semiconductor Electronics 2008 Article PeerReviewed Hashim, Abdul Manaf and Yasui, Kanji (2008) Heteroepitaxial Growth Of 3C–SiC On Si Substrates By Rapid Thermal Triode Plasma CVD Using Dimethyl silane At Low Temperature. Jurnal Teknologi, 8 (19). pp. 3523-3527. http://dx.doi.org/10.1109/SMELEC.2006.380713 DOI: 10.1109/SMELEC.2006.380713
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Hashim, Abdul Manaf
Yasui, Kanji
Heteroepitaxial Growth Of 3C–SiC On Si Substrates By Rapid Thermal Triode Plasma CVD Using Dimethyl silane At Low Temperature
description The investigation of the dependence of the cubic silicon carbide (3C-SiC) film characteristics on the reaction pressures, growth temperatures and hydrogen dilution rates was carried out by rapid thermal triode plasma CVD using dimethylsilane as a source gas. The stoichiometric 3C-SiC films with good crystallinity and crystal orientation were successfully grown at 1100-1200degC. The crystallinity and the crystal orientation of SiC films grown at large dilution rate of above 200 and growth pressure of 0.3 ~ 0.7 Torr were better than those grown at small dilution rate and high growth pressure. Under large dilution rate, large amount of hydrogen radicals can be generated. It is speculated that excessive carbon atoms or weak bonds formed in SiC films were effectively extracted by the large amount of hydrogen radicals.
format Article
author Hashim, Abdul Manaf
Yasui, Kanji
author_facet Hashim, Abdul Manaf
Yasui, Kanji
author_sort Hashim, Abdul Manaf
title Heteroepitaxial Growth Of 3C–SiC On Si Substrates By Rapid Thermal Triode Plasma CVD Using Dimethyl silane At Low Temperature
title_short Heteroepitaxial Growth Of 3C–SiC On Si Substrates By Rapid Thermal Triode Plasma CVD Using Dimethyl silane At Low Temperature
title_full Heteroepitaxial Growth Of 3C–SiC On Si Substrates By Rapid Thermal Triode Plasma CVD Using Dimethyl silane At Low Temperature
title_fullStr Heteroepitaxial Growth Of 3C–SiC On Si Substrates By Rapid Thermal Triode Plasma CVD Using Dimethyl silane At Low Temperature
title_full_unstemmed Heteroepitaxial Growth Of 3C–SiC On Si Substrates By Rapid Thermal Triode Plasma CVD Using Dimethyl silane At Low Temperature
title_sort heteroepitaxial growth of 3c–sic on si substrates by rapid thermal triode plasma cvd using dimethyl silane at low temperature
publisher IEEE International Conference on Semiconductor Electronics
publishDate 2008
url http://eprints.utm.my/id/eprint/25949/
http://dx.doi.org/10.1109/SMELEC.2006.380713
_version_ 1643647634906284032

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