Crystallization of polycrystalline silicon thin film by excimer laser annealing

Enhancing the crystallization of silicon thin film is important for better performance of thin film transistor (TFT). In an attempt to achieve this goal,a fundamental study was carried out to enhance the crystallization of doped silicon thin film (STF) with various types of dopants. The dopants used...

Full description

Saved in:
Bibliographic Details
Main Author: Ab. Razak, Siti Noraiza
Format: Thesis
Language:English
Published: 2011
Subjects:
Online Access:http://eprints.utm.my/id/eprint/33707/1/SitiNoraizaBintiAbRazakMFS2011.pdf
http://eprints.utm.my/id/eprint/33707/
http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:72122?queryType=vitalDismax&query=Crystallization+of+polycrystalline+silicon+thin+film+by+excimer+laser+annealing&public=true
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Universiti Teknologi Malaysia
Language: English
id my.utm.33707
record_format eprints
spelling my.utm.337072021-06-01T02:19:27Z http://eprints.utm.my/id/eprint/33707/ Crystallization of polycrystalline silicon thin film by excimer laser annealing Ab. Razak, Siti Noraiza Q Science (General) Enhancing the crystallization of silicon thin film is important for better performance of thin film transistor (TFT). In an attempt to achieve this goal,a fundamental study was carried out to enhance the crystallization of doped silicon thin film (STF) with various types of dopants. The dopants used in this research are copper, aluminium and germanium. Initially the amorphous silicon (a-Si) film was prepared by low pressure physical vapour deposition (PVD). The STF was annealed using a combination of two techniques. Firstly, the doped STF was annealed by conventional method using tube furnace. Secondly, annealing was done using argon fluoride (ArF) excimer laser. The microstructure of thin film was analyzed using metallurgical technique via field emission scanning electron microscope(FESEM) and atomic force microscope (AFM). In general the grain size of doped STF increased with the energy density of the excimer laser except for Si:Ge. However, the crystallization was found to decrease after exceeding the critical or super lateral growth (SLG) energy. The optimum grain size achieved by Si:Cu, Si:Al, and Si:Ge thin film were 143.2, 129.2 and 105.6 nm respectively at the corresponding SLG energy each of 345.00, 356.11, and 413.78 mJcm-2 respectively. Copper was found to be the best dopantbased on its largest grain size achievement. The enhancement of crystallization was also carried out using single heat treatment that are a conventional furnace heat treatment and directly using ELA separately. Apparently, the combination of the two techniquesoffers better performance in comparison to any single heat treatment. 2011 Thesis NonPeerReviewed application/pdf en http://eprints.utm.my/id/eprint/33707/1/SitiNoraizaBintiAbRazakMFS2011.pdf Ab. Razak, Siti Noraiza (2011) Crystallization of polycrystalline silicon thin film by excimer laser annealing. Masters thesis, Universiti Teknologi Malaysia, Faculty of Science. http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:72122?queryType=vitalDismax&query=Crystallization+of+polycrystalline+silicon+thin+film+by+excimer+laser+annealing&public=true
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
language English
topic Q Science (General)
spellingShingle Q Science (General)
Ab. Razak, Siti Noraiza
Crystallization of polycrystalline silicon thin film by excimer laser annealing
description Enhancing the crystallization of silicon thin film is important for better performance of thin film transistor (TFT). In an attempt to achieve this goal,a fundamental study was carried out to enhance the crystallization of doped silicon thin film (STF) with various types of dopants. The dopants used in this research are copper, aluminium and germanium. Initially the amorphous silicon (a-Si) film was prepared by low pressure physical vapour deposition (PVD). The STF was annealed using a combination of two techniques. Firstly, the doped STF was annealed by conventional method using tube furnace. Secondly, annealing was done using argon fluoride (ArF) excimer laser. The microstructure of thin film was analyzed using metallurgical technique via field emission scanning electron microscope(FESEM) and atomic force microscope (AFM). In general the grain size of doped STF increased with the energy density of the excimer laser except for Si:Ge. However, the crystallization was found to decrease after exceeding the critical or super lateral growth (SLG) energy. The optimum grain size achieved by Si:Cu, Si:Al, and Si:Ge thin film were 143.2, 129.2 and 105.6 nm respectively at the corresponding SLG energy each of 345.00, 356.11, and 413.78 mJcm-2 respectively. Copper was found to be the best dopantbased on its largest grain size achievement. The enhancement of crystallization was also carried out using single heat treatment that are a conventional furnace heat treatment and directly using ELA separately. Apparently, the combination of the two techniquesoffers better performance in comparison to any single heat treatment.
format Thesis
author Ab. Razak, Siti Noraiza
author_facet Ab. Razak, Siti Noraiza
author_sort Ab. Razak, Siti Noraiza
title Crystallization of polycrystalline silicon thin film by excimer laser annealing
title_short Crystallization of polycrystalline silicon thin film by excimer laser annealing
title_full Crystallization of polycrystalline silicon thin film by excimer laser annealing
title_fullStr Crystallization of polycrystalline silicon thin film by excimer laser annealing
title_full_unstemmed Crystallization of polycrystalline silicon thin film by excimer laser annealing
title_sort crystallization of polycrystalline silicon thin film by excimer laser annealing
publishDate 2011
url http://eprints.utm.my/id/eprint/33707/1/SitiNoraizaBintiAbRazakMFS2011.pdf
http://eprints.utm.my/id/eprint/33707/
http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:72122?queryType=vitalDismax&query=Crystallization+of+polycrystalline+silicon+thin+film+by+excimer+laser+annealing&public=true
_version_ 1703960423747813376