Characterization of liquid-phase sensor utilizing gan-based two terminal devices
GaN-based HEMT structures are versatile structures that may be used for a variety of sensing applications. Due to their low intrinsic carrier concentrations, wide band gap semiconductor sensors based on GaN can be operated at lower current levels than conventional Si-based devices and offer the capa...
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| Main Authors: | , , , , |
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| Format: | Article |
| Published: |
American Institute of Physics
2011
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/44783/ |
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| Institution: | Universiti Teknologi Malaysia |
| Summary: | GaN-based HEMT structures are versatile structures that may be used for a variety of sensing applications. Due to their low intrinsic carrier concentrations, wide band gap semiconductor sensors based on GaN can be operated at lower current levels than conventional Si-based devices and offer the capability of detection up to 600 °C [1–5]. The ability of electronic devices fabricated on these materials to operate in high temperature, high power and high flux/energy radiation conditions enable performance enhancements in a wide variety of spacecraft, satellite, homeland defense, mining, automobile, nuclear power, and radar applications. |
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