Characterization of liquid-phase sensor utilizing gan-based two terminal devices

• Main Authors: Zainal Abidin, Mastura Shafinaz, Wang, Soo Jeat, Hashim, Abdul Manaf, Abdul Rahman, Shaharin Fadzli, Sharifabad, Maneea Eizadi
• Format: Article
• Published: American Institute of Physics 2011
• Subjects: TA Engineering (General). Civil engineering (General)
• Online Access: http://eprints.utm.my/id/eprint/44783/
• Institution: Universiti Teknologi Malaysia

GaN-based HEMT structures are versatile structures that may be used for a variety of sensing applications. Due to their low intrinsic carrier concentrations, wide band gap semiconductor sensors based on GaN can be operated at lower current levels than conventional Si-based devices and offer the capability of detection up to 600 °C [1–5]. The ability of electronic devices fabricated on these materials to operate in high temperature, high power and high flux/energy radiation conditions enable performance enhancements in a wide variety of spacecraft, satellite, homeland defense, mining, automobile, nuclear power, and radar applications.