Breakdown voltage reduction analysis with adopting dual channel vertical strained SiGe impact ionization MOSFET (VESIMOS)

Breakdown voltage reduction analysis with adopting dual channel vertical strained SiGe impact ionization MOSFET (VESIMOS)

The Single and Dual Strained SiGe layer for Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET (VESIMOS) have been successfully analyzed in this paper. It is found that the drain current for single (SC) and dual channel (DC) VESIMOS were increased sharply initially due to the presen...

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Bibliographic Details
Main Authors: Saad, Ismail, Chan, Bun Seng, Hamzah, Mohd. Zuhir, Ismail, Razali, Mohamad, Khairul Anuar, Ghosh, Bablu, Hashim, Uda
Format: Article
Published: UK Simulation Society 2014
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/52035/
http://ijssst.info/Vol-15/No-2/cover-15-2.htm
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Institution: Universiti Teknologi Malaysia

Internet

http://eprints.utm.my/id/eprint/52035/
http://ijssst.info/Vol-15/No-2/cover-15-2.htm

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