Breakdown voltage reduction analysis with adopting dual channel vertical strained SiGe impact ionization MOSFET (VESIMOS)

• Main Authors: Saad, Ismail, Chan, Bun Seng, Hamzah, Mohd. Zuhir, Ismail, Razali, Mohamad, Khairul Anuar, Ghosh, Bablu, Hashim, Uda
• Format: Article
• Published: UK Simulation Society 2014
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/52035/; http://ijssst.info/Vol-15/No-2/cover-15-2.htm
• Institution: Universiti Teknologi Malaysia

The Single and Dual Strained SiGe layer for Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET (VESIMOS) have been successfully analyzed in this paper. It is found that the drain current for single (SC) and dual channel (DC) VESIMOS were increased sharply initially due to the presen...