Seed/catalyst-free growth of gallium-based compound materials on graphene on insulator by electrochemical deposition at room temperature

• Main Authors: Rashiddy Wong, Freddawati, Ahmed Ali, Amgad, Yasui, Kanji, Hashim, Abdul Manaf
• Format: Article
• Published: Springer New York 2015
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/55389/; http://dx.doi.org/10.1186/s11671-015-0943-y
• Institution: Universiti Teknologi Malaysia

We report the growth of gallium-based compounds, i.e., gallium oxynitride (GaON) and gallium oxide (Ga2O3) on multilayer graphene (MLG) on insulator using a mixture of ammonium nitrate (NH4NO3) and gallium nitrate (Ga(NO3)3) by electrochemical deposition (ECD) method at room temperature (RT) for the...