Defect-free mixed mono- and bi-layer graphene synthesized from refined palm oil by thermal chemical vapor deposition
Growth of defect-free large-area mixed mono-and bi-layer graphene using refined cooking palm oil on nickel (Ni) via thermal chemical vapor deposition was demonstrated for the first time. Small surface roughness of Ni substrate was obtained by annealing in hydrogen (H2) ambient. Small surface roughne...
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2016
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my.utm.711472017-11-15T01:16:55Z http://eprints.utm.my/id/eprint/71147/ Defect-free mixed mono- and bi-layer graphene synthesized from refined palm oil by thermal chemical vapor deposition Jalani, D. Rahman, S. F. A. Hashim, A. M. TK Electrical engineering. Electronics Nuclear engineering Growth of defect-free large-area mixed mono-and bi-layer graphene using refined cooking palm oil on nickel (Ni) via thermal chemical vapor deposition was demonstrated for the first time. Small surface roughness of Ni substrate was obtained by annealing in hydrogen (H2) ambient. Small surface roughness of Ni substrate and introduction of high H2 concentration during the growth improve the uniformity and suppress the formation of defect in the grown graphene. Coverage of mixed mono- and bi-layer graphene up to 65 was obtained. The grown graphene film showed an optical transmission of 80 at a wavelength of 550A0nm, and a sheet resistance of 12.89A0kO/sq. This work provides an alternative approach towards a development of less expensive growth technology using safe, easily obtained, low value raw carbon-containing precursor. Elsevier B.V. 2016 Article PeerReviewed Jalani, D. and Rahman, S. F. A. and Hashim, A. M. (2016) Defect-free mixed mono- and bi-layer graphene synthesized from refined palm oil by thermal chemical vapor deposition. Materials Letters, 182 . pp. 168-172. ISSN 0167-577X https://www.scopus.com/inward/record.uri?eid=2-s2.0-84978139280&doi=10.1016%2fj.matlet.2016.06.112&partnerID=40&md5=809b16dbce160cf1a1265835848184d5 |
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TK Electrical engineering. Electronics Nuclear engineering Jalani, D. Rahman, S. F. A. Hashim, A. M. Defect-free mixed mono- and bi-layer graphene synthesized from refined palm oil by thermal chemical vapor deposition |
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Growth of defect-free large-area mixed mono-and bi-layer graphene using refined cooking palm oil on nickel (Ni) via thermal chemical vapor deposition was demonstrated for the first time. Small surface roughness of Ni substrate was obtained by annealing in hydrogen (H2) ambient. Small surface roughness of Ni substrate and introduction of high H2 concentration during the growth improve the uniformity and suppress the formation of defect in the grown graphene. Coverage of mixed mono- and bi-layer graphene up to 65 was obtained. The grown graphene film showed an optical transmission of 80 at a wavelength of 550A0nm, and a sheet resistance of 12.89A0kO/sq. This work provides an alternative approach towards a development of less expensive growth technology using safe, easily obtained, low value raw carbon-containing precursor. |
format |
Article |
author |
Jalani, D. Rahman, S. F. A. Hashim, A. M. |
author_facet |
Jalani, D. Rahman, S. F. A. Hashim, A. M. |
author_sort |
Jalani, D. |
title |
Defect-free mixed mono- and bi-layer graphene synthesized from refined palm oil by thermal chemical vapor deposition |
title_short |
Defect-free mixed mono- and bi-layer graphene synthesized from refined palm oil by thermal chemical vapor deposition |
title_full |
Defect-free mixed mono- and bi-layer graphene synthesized from refined palm oil by thermal chemical vapor deposition |
title_fullStr |
Defect-free mixed mono- and bi-layer graphene synthesized from refined palm oil by thermal chemical vapor deposition |
title_full_unstemmed |
Defect-free mixed mono- and bi-layer graphene synthesized from refined palm oil by thermal chemical vapor deposition |
title_sort |
defect-free mixed mono- and bi-layer graphene synthesized from refined palm oil by thermal chemical vapor deposition |
publisher |
Elsevier B.V. |
publishDate |
2016 |
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http://eprints.utm.my/id/eprint/71147/ https://www.scopus.com/inward/record.uri?eid=2-s2.0-84978139280&doi=10.1016%2fj.matlet.2016.06.112&partnerID=40&md5=809b16dbce160cf1a1265835848184d5 |
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