Influences of Sr-90 beta-ray irradiation on electrical characteristics of carbon nanoparticles

• Main Authors: Kasani, H., Taghi Ahmadi, M., Khoda-Bakhsh, R., Rezaeiochbelagh, D., Ismail, R.
• Format: Article
• Published: American Institute of Physics Inc. 2016
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/71161/; https://www.scopus.com/inward/record.uri?eid=2-s2.0-84962373631&doi=10.1063%2f1.4944901&partnerID=40&md5=7d83cd592457a6251b4b6d32d007d988
• Institution: Universiti Teknologi Malaysia

This work is concerned with the low cost fabrication of carbon nanoparticles (CNPs), and its application to beta ray detection. The structural and morphological properties of the CNPs were obtained by spectral and microscopy techniques. A system based on CNPs application in the metal-semiconductor-metal (MSM) junction platform, which acts as a beta-ray (β-ray) sensor, is fabricated. The prototype is characterised by modelling, Monte Carlo simulation, and electrical investigations. Changes to the electrical behaviour of the proposed MSM system due to β-ray irradiation are validated by experimental results in both Ohmic and non-Ohmic (Schottky) contacts. The simulation was performed using the MCNPX code, which showed that most of the β-ray energies are deposited into CNPs and electrodes. However, in the Ohmic contact, because the β-ray is induced, the current of CNPs is decreased. The reduction of the current might be due to the change of the carrier properties by increasing the scattering of electrons. The current-density equation for electrons was employed for understanding the effects of β-ray in Ohmic contact of CNPs. On the contrary, in the Schottky contact case, CNPs current was increased with constant voltage when biased by β-ray irradiation. In this paper, the electron-hole generation using β-rays is dominant when compared to other significant effects of radiation exposure on semiconducting CNP-based Schottky contact. Hence, the current increment of CNPs can be justified by electron-hole generation in the depletion region.