Statistical variability in n-channel SOI FinFET in the presence of random discrete dopant

• Main Authors: Alias, N. E., Hassan, R., Johari, Z.
• Format: Conference or Workshop Item
• Published: Institute of Electrical and Electronics Engineers Inc. 2016
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/73076/; https://www.scopus.com/inward/record.uri?eid=2-s2.0-84991010575&doi=10.1109%2fSMELEC.2016.7573634&partnerID=40&md5=170ce12a731382b851aa1abde8112150
• Institution: Universiti Teknologi Malaysia

Among the source of variability, random discrete dopant (RDD) fluctuation is significant in current technology scaling nodes. Number and position of discrete dopants give a crucial impact on device's electrical characteristics. In this paper, a comprehensive full-scale 3D simulation study of na...