High speed – energy efficient successive approximation analog to digital converter using tri-level switching
This thesis reports issues and design methods used to achieve high-speed and high-resolution Successive Approximation Register analog to digital converters (SAR ADCs). A major drawback of this technique relates to the mismatch in the binary ratios of capacitors which causes nonlinearity. Another iss...
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Format: | Thesis |
Language: | English |
Published: |
2015
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Online Access: | http://eprints.utm.my/id/eprint/77897/1/SaharSarafiPFKE2015.pdf http://eprints.utm.my/id/eprint/77897/ http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:95147 |
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Institution: | Universiti Teknologi Malaysia |
Language: | English |
Summary: | This thesis reports issues and design methods used to achieve high-speed and high-resolution Successive Approximation Register analog to digital converters (SAR ADCs). A major drawback of this technique relates to the mismatch in the binary ratios of capacitors which causes nonlinearity. Another issue is the use of large capacitors due to nonlinear effect of parasitic capacitance. Nonlinear effect of capacitor mismatch is investigated in this thesis. Based on the analysis, a new Tri-level switching algorithm is proposed to reduce the matching requirement for capacitors in SAR ADCs. The integral non-linearity (INL) and the differential non-linearity (DNL) of the proposed scheme are reduced by factor of two over conventional SAR ADC, which is the lowest compared to the previously reported schemes. In addition, the switching energy of the proposed scheme is reduced by 98.02% compared with the conventional SAR architecture. A new correction method to solve metastability error of comparator based on a novel design approach is proposed which reduces the required settling time about 1.1τ for each conversion cycle. Based on the above proposed methods two SAR ADCs: an 8-bit SAR ADC with 50MS/sec sampling rate, and a 10-bit SAR split ADC with 70 MS/sec sampling rate have been designed in 0.18μm Silterra complementary metal oxide semiconductor (CMOS) technology process which works at 1.2V supply voltage and input voltage of 2.4Vp-p. The 8-bit ADC digitizes 25MHz input signal with 48.16dB signal to noise and distortion ratio (SNDR) and 52.41dB spurious free dynamic range (SFDR) while consuming about 589μW. The figure of merit (FOM) of this ADC is 56.65 fJ/conv-step. The post layout of the 10-bit ADC with 1MHz input frequency produces SNDR, SFDR and effective number of bits (ENOB) of 57.1dB, 64.05dB and 9.17Bit, respectively, while its DNL and INL are -0.9/+2.8 least significant bit (LSB) and -2.5/+2.7 LSB, respectively. The total power consumption, including digital, analog and reference power, is 1.6mW. The FOM is 71.75fJ/conv. step. |
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