Electron driven mobility model by light on the stacked metal–dielectric interfaces
An electron mobility enhancement is the very important phenomenon of an electron in the electronic device, where the high electronic device performance has the good electron mobility, which is obtained by the overall electron drift velocity in the electronic material driven potential difference. The...
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my.utm.806592019-06-27T06:12:44Z http://eprints.utm.my/id/eprint/80659/ Electron driven mobility model by light on the stacked metal–dielectric interfaces Pornsuwancharoen, N. Youplao, P. Amiri, I. S. Ali, J. Yupapin, P. Q Science (General) An electron mobility enhancement is the very important phenomenon of an electron in the electronic device, where the high electronic device performance has the good electron mobility, which is obtained by the overall electron drift velocity in the electronic material driven potential difference. The increase in electron mobility by the injected high group velocity pulse is proposed in this article. By using light pulse input into the nonlinear microring resonator, light pulse group velocity can be tuned and increased, from which the required output group velocity can be obtained, which can be used to drive electron within the plasmonic waveguide, where eventually, the relative electron mobility can be obtained, the increasing in the electron mobility after adding up by the driven optical fields can be connected to the external electronic devices and circuits, which can be useful for many applications. John Wiley and Sons Inc. 2017 Article PeerReviewed Pornsuwancharoen, N. and Youplao, P. and Amiri, I. S. and Ali, J. and Yupapin, P. (2017) Electron driven mobility model by light on the stacked metal–dielectric interfaces. Microwave and Optical Technology Letters, 59 (7). pp. 1704-1709. ISSN 0895-2477 http://dx.doi.org/10.1002/mop.30612 DOI:10.1002/mop.30612 |
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An electron mobility enhancement is the very important phenomenon of an electron in the electronic device, where the high electronic device performance has the good electron mobility, which is obtained by the overall electron drift velocity in the electronic material driven potential difference. The increase in electron mobility by the injected high group velocity pulse is proposed in this article. By using light pulse input into the nonlinear microring resonator, light pulse group velocity can be tuned and increased, from which the required output group velocity can be obtained, which can be used to drive electron within the plasmonic waveguide, where eventually, the relative electron mobility can be obtained, the increasing in the electron mobility after adding up by the driven optical fields can be connected to the external electronic devices and circuits, which can be useful for many applications. |
format |
Article |
author |
Pornsuwancharoen, N. Youplao, P. Amiri, I. S. Ali, J. Yupapin, P. |
author_facet |
Pornsuwancharoen, N. Youplao, P. Amiri, I. S. Ali, J. Yupapin, P. |
author_sort |
Pornsuwancharoen, N. |
title |
Electron driven mobility model by light on the stacked metal–dielectric interfaces |
title_short |
Electron driven mobility model by light on the stacked metal–dielectric interfaces |
title_full |
Electron driven mobility model by light on the stacked metal–dielectric interfaces |
title_fullStr |
Electron driven mobility model by light on the stacked metal–dielectric interfaces |
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Electron driven mobility model by light on the stacked metal–dielectric interfaces |
title_sort |
electron driven mobility model by light on the stacked metal–dielectric interfaces |
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John Wiley and Sons Inc. |
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2017 |
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http://eprints.utm.my/id/eprint/80659/ http://dx.doi.org/10.1002/mop.30612 |
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