Current Analysis and Modeling of Fullerene Single-Electron Transistor at Room Temperature

• Main Authors: Khadem Hosseini, V., Ahmadi, M. T., Ismail, R.
• Format: Article
• Published: Springer New York LLC 2017
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/80884/; http://dx.doi.org/10.1007/s11664-018-6366-7
• Institution: Universiti Teknologi Malaysia

The single electron transistor (SET) as a fast electronic device is a candidate for future nanoscale circuits because of its low energy consumption, small size and simplified circuit. It consists of source and drain electrodes with a quantum dot (QD) located between them. Moreover, it operates based...