Analysis and modeling of quantum capacitance on graphene single electron transistor

• Main Authors: Hosseini, Vahideh Khadem, Dideban, Daryoosh, Ahmadi, Mohammad Taghi, Ismail, Razali
• Format: Article
• Published: World Scientific Publishing Co. Pte Ltd. 2018
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/84304/; https://doi.org/10.1142/S0217979218502351
• Institution: Universiti Teknologi Malaysia

Graphene single electron transistor (SET) as a coulomb blockade (CB) device operates based on the quantum mechanical effect. Its desired current is achieved by overcoming the CB energy that depends on the total capacitance of SET. Therefore, small size of graphene quantum capacitance is suitable for SET structure because it plays a dominant role in the total capacitance. In this paper, the density of state (DOS) model of graphene SET is suggested because of its important effect on many physical properties. Furthermore, carrier concentration as a key factor in quantum capacitance is modeled. Finally, the quantum capacitance of graphene SET based on the fundamental parameters is modeled and compared to the experimental data, so an acceptable agreement between them is reported. As a result, silicon SET can be replaced with graphene SET because of its lower quantum capacitance and also higher operation speed than the silicon one.