Annealing temperature induced improved crystallinity of ysz thin film

• Main Authors: Rusli, N. A., Muhammad, R., Ghoshal, S. K., Nur, H., Nayan, N.
• Format: Article
• Language: English
• Published: Institute of Physics Publishing 2020
• Subjects: QC Physics
• Online Access: http://eprints.utm.my/id/eprint/87557/1/NurhananiAflizanRusli2020_AnnealingTemperatureInducedImprovedCrystallinity.pdf; http://eprints.utm.my/id/eprint/87557/; http://www.dx.doi.org/10.1088/2053-1591/ab9039
• Institution: Universiti Teknologi Malaysia

Six YSZ thin films (YSZTFs) were prepared at varied annealing temperature (380 °C to 600 °C) by radio frequency magnetron sputtering method. Glancing angle x-ray diffraction (GAXRD) pattern revealed the polycrystalline nature of all films with crystallite size in the range of 9 to 15 nm. Sample annealed at 400 °C displayed the lowest microstrain (0.262) and crystallinity (60%). FESEM images disclosed dense, homogeneous and crack free growth of annealed samples compared to as-deposited one. EDX spectra detected the right elemental compositions of films. AFM images showed growth evolution of YSZ grains with size range between 0.2 to 5 nm and improved films' surface roughness. HRTEM measurement of the studied YSZTFs exhibited lattice orientation and atomic structure of nucleated YSZ nanocrystallites. Furthermore, film annealed at 500 °C divulged less oriented structure because of dislocation.