Low temperature heteroepitaxial growth of 3C-SiC on silicon substrates by triode plasma chemical vapor deposition using dimethylsilane

• Main Authors: Hashim, Abdul Manaf, Yasui, K.
• Format: Article
• Published: Science Alert 2008
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/8958/; http://dx.doi.org/10.3923/jas.2008.3523.3527
• Institution: Universiti Teknologi Malaysia

The investigation of the dependence of the cubic silicon carbide (3C-SiC) film characteristics on the reaction pressures, growth temperatures and hydrogen dilution rates was carried out by rapid thermal triode plasma CVD using dimethylsilane as a source gas. The stoichiometric 3C-SiC films with good...