Low-power RRAM Device based 1T1R Array Design with CNTFET as Access Device

Low-power RRAM Device based 1T1R Array Design with CNTFET as Access Device

A SPICE model of metal oxide based resistive random access memory (RRAM) devices is demonstrated in this paper having bipolar switching characteristics and utilizing carbon nanotube field effect transistor (CNTFET) in a 1T1R configuration. The growth and the dissolution of the conductive filament in...

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Bibliographic Details
Main Authors: Zahoor, F., Zulkifli, T.Z.A., Khanday, F.A., Fida, A.A.
Format: Conference or Workshop Item
Published: Institute of Electrical and Electronics Engineers Inc. 2019
Online Access:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85075635287&doi=10.1109%2fSCORED.2019.8896306&partnerID=40&md5=fab05c2372a008c06325875139d60b6c
http://eprints.utp.edu.my/23615/
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Institution: Universiti Teknologi Petronas

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https://www.scopus.com/inward/record.uri?eid=2-s2.0-85075635287&doi=10.1109%2fSCORED.2019.8896306&partnerID=40&md5=fab05c2372a008c06325875139d60b6c
http://eprints.utp.edu.my/23615/

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